| Автор | Gao, J. |
| Автор | Zheng, L. |
| Автор | Song, Z. |
| Автор | Lin, C. |
| Автор | Zhu, D. |
| Дата выпуска | 1999 |
| dc.description | PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> (PZT) and YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−δ </sub> (YBCO) thin films were fabricated by a pulsed laser deposition (PLD) method. The Pt/PZT/Pt ferroelectric capacitors were fabricated on silicon substrates while the Au/PZT/YBCO capacitors were fabricated on LaAlO<sub>3</sub> substrates. The capacitance-voltage (C-V) properties and the hysteresis loops of the capacitors were measured before and after γ-ray irradiation. The results show that for Pt/PZT/Pt capacitors, the remanent polarization P <sub>r</sub> and the absolute coercive field E <sub>C</sub> increase while the dielectric constant ε decrease with increasing accumulated dose. For the Au/PZT/YBCO capacitors, P <sub>r</sub> and ε decreased with accumulated dose, but the absolute value of the negative and positive coercive fields increased. The results have been interpreted by radiation-induced positive charge trapping at defects in the ferroelectric materials. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | Characteristics of Pt/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub>/Pt and Au/PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub>/YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−δ </sub> capacitors after γ-ray irradiation |
| Тип | research-article |
| DOI | 10.1051/epjap:1999235 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 8 |
| Первая страница | 105 |
| Последняя страница | 109 |
| Аффилиация | Gao J.; Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800, P.R. China ; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China |
| Аффилиация | Zheng L.; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China |
| Аффилиация | Song Z.; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China |
| Аффилиация | Lin C.; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China |
| Аффилиация | Zhu D.; Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800, P.R. China |
| Выпуск | 2 |
