Fabrication of co-planar metal-insulator-metal solid state nanojunctions down to 5 nm
Cholet, S.; Joachim, C.; Martinez, J. P.; Rousset, B.; Cholet S.; CEMES-CNRS, 29 rue Jeanne Marvig, B.P. 4347, 31055 Toulouse Cedex, France; Joachim C.; CEMES-CNRS, 29 rue Jeanne Marvig, B.P. 4347, 31055 Toulouse Cedex, France; Martinez J. P.; CEMES-CNRS, 29 rue Jeanne Marvig, B.P. 4347, 31055 Toulouse Cedex, France; Rousset B.; LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex, France
Журнал:
The European Physical Journal Applied Physics
Дата:
1999
Аннотация:
An optimised process is presented to fabricate co-planar metal-insulator-metal nanojunctions down to an inter-electrode distance of 5 nm. Simulation of the e-beam insulation of the PMMA/SiO<sub>2</sub>/Si interface is used to optimise the PMMA resist thickness and the exposure strategy. The process was well stabilised to provide a full statistical analysis of the number of nanojunctions produced per wafer. A 10% throughput was reached for 5 nm giving a mass production of about 100 nanojunctions per 2 inches wafer all equipped with their interconnection pads.
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