| Автор | Cholet, S. |
| Автор | Joachim, C. |
| Автор | Martinez, J. P. |
| Автор | Rousset, B. |
| Дата выпуска | 1999 |
| dc.description | An optimised process is presented to fabricate co-planar metal-insulator-metal nanojunctions down to an inter-electrode distance of 5 nm. Simulation of the e-beam insulation of the PMMA/SiO<sub>2</sub>/Si interface is used to optimise the PMMA resist thickness and the exposure strategy. The process was well stabilised to provide a full statistical analysis of the number of nanojunctions produced per wafer. A 10% throughput was reached for 5 nm giving a mass production of about 100 nanojunctions per 2 inches wafer all equipped with their interconnection pads. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | Fabrication of co-planar metal-insulator-metal solid state nanojunctions down to 5 nm |
| Тип | research-article |
| DOI | 10.1051/epjap:1999239 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 8 |
| Первая страница | 139 |
| Последняя страница | 145 |
| Аффилиация | Cholet S.; CEMES-CNRS, 29 rue Jeanne Marvig, B.P. 4347, 31055 Toulouse Cedex, France |
| Аффилиация | Joachim C.; CEMES-CNRS, 29 rue Jeanne Marvig, B.P. 4347, 31055 Toulouse Cedex, France |
| Аффилиация | Martinez J. P.; CEMES-CNRS, 29 rue Jeanne Marvig, B.P. 4347, 31055 Toulouse Cedex, France |
| Аффилиация | Rousset B.; LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex, France |
| Выпуск | 2 |
