Effect of Cu on InSe/Si(111) heterojunctions
Abidri, B.; Lacharme, J.-P.; Ghamnia, M.; Sébenne, C. A.; Zerrouki, M.; Abidri B.; Laboratoire Surfaces des Matériaux, Institut de Physique, Université d'Oran Es-Sénia, 31100 Oran, Algeria ; Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France; Lacharme J.-P.; Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France; Ghamnia M.; Laboratoire Surfaces des Matériaux, Institut de Physique, Université d'Oran Es-Sénia, 31100 Oran, Algeria ; Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France; Sébenne C. A.; Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France; Zerrouki M.; Laboratoire Surfaces des Matériaux, Institut de Physique, Université d'Oran Es-Sénia, 31100 Oran, Algeria ; Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France
Журнал:
The European Physical Journal Applied Physics
Дата:
1999
Аннотация:
The effect of sequential deposition of Cu onto a 300 Å-thick film of layered InSe epitaxially grown onto a Si(111) substrate, has been studied by Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and photoemission yield spectroscopy (PYS). Cu coverages were from a few hundredth of a monolayer (in terms of InSe atomic surface plane: 1 ML = 7.2 × 10<sup>14</sup> at/cm<sup>2</sup>, that is 0.85 Å of Cu-metal) to 300 ML. The effect of annealings up to 370 °C was also studied. It is shown that Cu has first a non uniform bulk interaction with InSe which looks like an insertion which saturates at 1 ML of Cu per In<sub>2</sub>Se<sub>2</sub> single layer. Then it forms islands which fully mask the surface beyond about 150 ML coverage (130 Å of Cu-metal). Upon annealings beyond 300 °C, the Si substrate behaves as a Cu sink.
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