| Автор | Abidri, B. |
| Автор | Lacharme, J.-P. |
| Автор | Ghamnia, M. |
| Автор | Sébenne, C. A. |
| Автор | Zerrouki, M. |
| Дата выпуска | 1999 |
| dc.description | The effect of sequential deposition of Cu onto a 300 Å-thick film of layered InSe epitaxially grown onto a Si(111) substrate, has been studied by Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and photoemission yield spectroscopy (PYS). Cu coverages were from a few hundredth of a monolayer (in terms of InSe atomic surface plane: 1 ML = 7.2 × 10<sup>14</sup> at/cm<sup>2</sup>, that is 0.85 Å of Cu-metal) to 300 ML. The effect of annealings up to 370 °C was also studied. It is shown that Cu has first a non uniform bulk interaction with InSe which looks like an insertion which saturates at 1 ML of Cu per In<sub>2</sub>Se<sub>2</sub> single layer. Then it forms islands which fully mask the surface beyond about 150 ML coverage (130 Å of Cu-metal). Upon annealings beyond 300 °C, the Si substrate behaves as a Cu sink. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | Effect of Cu on InSe/Si(111) heterojunctions |
| Тип | research-article |
| DOI | 10.1051/epjap:1999241 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 8 |
| Первая страница | 153 |
| Последняя страница | 158 |
| Аффилиация | Abidri B.; Laboratoire Surfaces des Matériaux, Institut de Physique, Université d'Oran Es-Sénia, 31100 Oran, Algeria ; Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France |
| Аффилиация | Lacharme J.-P.; Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France |
| Аффилиация | Ghamnia M.; Laboratoire Surfaces des Matériaux, Institut de Physique, Université d'Oran Es-Sénia, 31100 Oran, Algeria ; Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France |
| Аффилиация | Sébenne C. A.; Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France |
| Аффилиация | Zerrouki M.; Laboratoire Surfaces des Matériaux, Institut de Physique, Université d'Oran Es-Sénia, 31100 Oran, Algeria ; Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France |
| Выпуск | 2 |
