Transmission electron microscopy of NdNiO<sub>3</sub> thin films on silicon substrates
Laffez, P.; Retoux, R.; Boullay, P.; Zaghrioui, M.; Lacorre, P.; van Tendeloo, G.; Laffez P.; Laboratoire de Physique de l'État Condensé (UMR CNRS 6087), Université du Maine, 72085 Le Mans Cedex 9, France; Retoux R.; Laboratoire des Fluorures (UMR 6010), Université du Maine, 72085 Le Mans Cedex 9, France; Boullay P.; EMAT, University of Antwerp, groeonenborgerlaan 171, Antwerp 2020, Belgium; Zaghrioui M.; Laboratoire de Physique de l'État Condensé (UMR CNRS 6087), Université du Maine, 72085 Le Mans Cedex 9, France; Lacorre P.; Laboratoire des Fluorures (UMR 6010), Université du Maine, 72085 Le Mans Cedex 9, France; van Tendeloo G.; EMAT, University of Antwerp, groeonenborgerlaan 171, Antwerp 2020, Belgium
Журнал:
The European Physical Journal Applied Physics
Дата:
2000
Аннотация:
The microstructure of NdNiO<sub>3</sub> thin films deposited on Si (100) has been investigated by high resolution electron microscopy. Deposition at 250 °C and 600 °C and several annealing at high temperature under oxygen pressure were performed. Depending on the deposition temperature and annealing conditions, different texture and microstructure were observed. Relationships between microstructure and transport properties are discussed. The differences of grain boundaries are suggested to be responsible for the difference in transport properties of the films.
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