| Автор | Laffez, P. |
| Автор | Retoux, R. |
| Автор | Boullay, P. |
| Автор | Zaghrioui, M. |
| Автор | Lacorre, P. |
| Автор | van Tendeloo, G. |
| Дата выпуска | 2000 |
| dc.description | The microstructure of NdNiO<sub>3</sub> thin films deposited on Si (100) has been investigated by high resolution electron microscopy. Deposition at 250 °C and 600 °C and several annealing at high temperature under oxygen pressure were performed. Depending on the deposition temperature and annealing conditions, different texture and microstructure were observed. Relationships between microstructure and transport properties are discussed. The differences of grain boundaries are suggested to be responsible for the difference in transport properties of the films. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 2000 |
| Название | Transmission electron microscopy of NdNiO<sub>3</sub> thin films on silicon substrates |
| Тип | research-article |
| DOI | 10.1051/epjap:2000171 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 12 |
| Первая страница | 55 |
| Последняя страница | 60 |
| Аффилиация | Laffez P.; Laboratoire de Physique de l'État Condensé (UMR CNRS 6087), Université du Maine, 72085 Le Mans Cedex 9, France |
| Аффилиация | Retoux R.; Laboratoire des Fluorures (UMR 6010), Université du Maine, 72085 Le Mans Cedex 9, France |
| Аффилиация | Boullay P.; EMAT, University of Antwerp, groeonenborgerlaan 171, Antwerp 2020, Belgium |
| Аффилиация | Zaghrioui M.; Laboratoire de Physique de l'État Condensé (UMR CNRS 6087), Université du Maine, 72085 Le Mans Cedex 9, France |
| Аффилиация | Lacorre P.; Laboratoire des Fluorures (UMR 6010), Université du Maine, 72085 Le Mans Cedex 9, France |
| Аффилиация | van Tendeloo G.; EMAT, University of Antwerp, groeonenborgerlaan 171, Antwerp 2020, Belgium |
| Выпуск | 1 |
