Anti-Stokes luminescence in nitrogen doped GaAs<sub>1−x </sub>P<sub> x </sub> alloys*
Meftah, A.; Oueslati, M.; Scalbert, D.; Meftah A.; Département de Physique, Faculté des Sciences de Tunis, Université de Tunis II,; Oueslati M.; Département de Physique, Faculté des Sciences de Tunis, Université de Tunis II,; Scalbert D.; Campus Universitaire, 1060 le Belvédère, Tunisie and Groupe d'Étude des Semiconducteurs, Université de Montpellier II, CNRS, 34095 Montpellier, Cedex 5, France
Журнал:
The European Physical Journal Applied Physics
Дата:
1998
Аннотация:
In indirect band gap ${\rm GaAs}_{1-x}{\rm P}_x$ alloys, the Nx levels of the excitons bound to nitrogen have been resonantly excited. The detection of the photoluminescence (PL) at energies greater than the excitation energy (Anti-Stokes Luminescence (ASL)) shows a new PL band which appears at temperatures lower than 40 K. Its mean energy 2.205 eV is nearly independent of the alloy composition. We investigate ASL as a function of excitation photon energy, excitation power and temperature. Moreover ASL has been time resolved.
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