| Автор | Meftah, A. |
| Автор | Oueslati, M. |
| Автор | Scalbert, D. |
| Дата выпуска | 1998 |
| dc.description | In indirect band gap ${\rm GaAs}_{1-x}{\rm P}_x$ alloys, the Nx levels of the excitons bound to nitrogen have been resonantly excited. The detection of the photoluminescence (PL) at energies greater than the excitation energy (Anti-Stokes Luminescence (ASL)) shows a new PL band which appears at temperatures lower than 40 K. Its mean energy 2.205 eV is nearly independent of the alloy composition. We investigate ASL as a function of excitation photon energy, excitation power and temperature. Moreover ASL has been time resolved. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1998 |
| Название | Anti-Stokes luminescence in nitrogen doped GaAs<sub>1−x </sub>P<sub> x </sub> alloys* |
| Тип | research-article |
| DOI | 10.1051/epjap:1998105 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 1 |
| Первая страница | 35 |
| Последняя страница | 38 |
| Аффилиация | Meftah A.; Département de Physique, Faculté des Sciences de Tunis, Université de Tunis II, |
| Аффилиация | Oueslati M.; Département de Physique, Faculté des Sciences de Tunis, Université de Tunis II, |
| Аффилиация | Scalbert D.; Campus Universitaire, 1060 le Belvédère, Tunisie and Groupe d'Étude des Semiconducteurs, Université de Montpellier II, CNRS, 34095 Montpellier, Cedex 5, France |
| Выпуск | 1 |
