Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor
Bourguiga, R.; Sik, H.; Scavennec, A.; Bourguiga R.; Faculté des Sciences de Bizerte, 7021 Zarzouna-Bizerte, Tunisia; Sik H.; France Telecom, Centre National d'Études des Télécommunications, Paris B Laboratoire de Bagneux, 196 avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France; Scavennec A.; France Telecom, Centre National d'Études des Télécommunications, Paris B Laboratoire de Bagneux, 196 avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France
Журнал:
The European Physical Journal Applied Physics
Дата:
1998
Аннотация:
The dependence of the current gain with the size of the emitter-base junction of double mesa Self Passivated Heterojunction Bipolar Transistors (SP-HBT) has been investigated, the extrinsic base layer being passivated with a n-type GaInP layer. The current gain is widely improved, due to a 18-fold reduction of the surface recombination in the extrinsic base region with respect to unpassivated HBT. The surface recombination current ideality factor has been found to be 1.13.
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