| Автор | Bourguiga, R. |
| Автор | Sik, H. |
| Автор | Scavennec, A. |
| Дата выпуска | 1998 |
| dc.description | The dependence of the current gain with the size of the emitter-base junction of double mesa Self Passivated Heterojunction Bipolar Transistors (SP-HBT) has been investigated, the extrinsic base layer being passivated with a n-type GaInP layer. The current gain is widely improved, due to a 18-fold reduction of the surface recombination in the extrinsic base region with respect to unpassivated HBT. The surface recombination current ideality factor has been found to be 1.13. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1998 |
| Название | Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor |
| Тип | research-article |
| DOI | 10.1051/epjap:1998104 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 4 |
| Первая страница | 27 |
| Последняя страница | 29 |
| Аффилиация | Bourguiga R.; Faculté des Sciences de Bizerte, 7021 Zarzouna-Bizerte, Tunisia |
| Аффилиация | Sik H.; France Telecom, Centre National d'Études des Télécommunications, Paris B Laboratoire de Bagneux, 196 avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France |
| Аффилиация | Scavennec A.; France Telecom, Centre National d'Études des Télécommunications, Paris B Laboratoire de Bagneux, 196 avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France |
| Выпуск | 1 |
