Gate-induced spin precession in an In<sub>0.53</sub>Ga<sub>0.47</sub>As two dimensional electron gas
Bournel, A.; Dollfus, P.; Bruno, P.; Hesto, P.; Bournel A.; Institut d'Électronique Fondamentale (CNRS URA22), Université Paris Sud, Bâtiment 220, 91405 Orsay Cedex, France; Dollfus P.; Institut d'Électronique Fondamentale (CNRS URA22), Université Paris Sud, Bâtiment 220, 91405 Orsay Cedex, France; Bruno P.; Max-Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany; Hesto P.; Institut d'Électronique Fondamentale (CNRS URA22), Université Paris Sud, Bâtiment 220, 91405 Orsay Cedex, France
Журнал:
The European Physical Journal Applied Physics
Дата:
1998
Аннотация:
We report a study of the gate-induced spin precession in an In<sub>0.53</sub>Ga<sub>0.47</sub>As two dimensional electron gas, using a Monte-Carlo transport model. The precession vector originates from the spin-orbit coupling existing at a III-V hetero-interface, usually denoted as Rashba interaction. Contrary to the case of a one dimensional electron gas, the precession vector is randomized by the scattering events, which leads to a non negligible loss of spin coherence for an initially spin-polarized electron population moving along a conduction channel. However, we show that by operating at the liquid nitrogen temperature, or by reducing the channel width to a value close to 0.1 µm, the gate-controlled spin-polarization remains high enough to enable the investigation of the physics of spin-related phenomena in a ferromagnet/semiconductor structure.
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