| Автор | Bournel, A. |
| Автор | Dollfus, P. |
| Автор | Bruno, P. |
| Автор | Hesto, P. |
| Дата выпуска | 1998 |
| dc.description | We report a study of the gate-induced spin precession in an In<sub>0.53</sub>Ga<sub>0.47</sub>As two dimensional electron gas, using a Monte-Carlo transport model. The precession vector originates from the spin-orbit coupling existing at a III-V hetero-interface, usually denoted as Rashba interaction. Contrary to the case of a one dimensional electron gas, the precession vector is randomized by the scattering events, which leads to a non negligible loss of spin coherence for an initially spin-polarized electron population moving along a conduction channel. However, we show that by operating at the liquid nitrogen temperature, or by reducing the channel width to a value close to 0.1 µm, the gate-controlled spin-polarization remains high enough to enable the investigation of the physics of spin-related phenomena in a ferromagnet/semiconductor structure. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1998 |
| Название | Gate-induced spin precession in an In<sub>0.53</sub>Ga<sub>0.47</sub>As two dimensional electron gas |
| Тип | rapid-communication |
| DOI | 10.1051/epjap:1998238 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 4 |
| Первая страница | 1 |
| Последняя страница | 4 |
| Аффилиация | Bournel A.; Institut d'Électronique Fondamentale (CNRS URA22), Université Paris Sud, Bâtiment 220, 91405 Orsay Cedex, France |
| Аффилиация | Dollfus P.; Institut d'Électronique Fondamentale (CNRS URA22), Université Paris Sud, Bâtiment 220, 91405 Orsay Cedex, France |
| Аффилиация | Bruno P.; Max-Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany |
| Аффилиация | Hesto P.; Institut d'Électronique Fondamentale (CNRS URA22), Université Paris Sud, Bâtiment 220, 91405 Orsay Cedex, France |
| Выпуск | 1 |
