Noise measurements on single electron transistors using bias switching read-out
Hakonen, P. J.; Kiviranta, M.; Penttilä, J. S.; Paalanen, M. A.; Hakonen P. J.; Low Temperature Laboratory, Helsinki University of Technology, PO Box 2200, 02015 Espoo HUT, Finland; Kiviranta M.; VTT Automation, Measurement Technology, PO Box 1304, 02044 VTT, Finland; Penttilä J. S.; Low Temperature Laboratory, Helsinki University of Technology, PO Box 2200, 02015 Espoo HUT, Finland; Paalanen M. A.; Low Temperature Laboratory, Helsinki University of Technology, PO Box 2200, 02015 Espoo HUT, Finland
Журнал:
The European Physical Journal Applied Physics
Дата:
2000
Аннотация:
We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlO<sub> x </sub>/Al devices with 1.2 μm island size and 100 × 100 nm<sup>2</sup> tunnel junctions, the noise at 10 Hz is $6 \times 10^{-4} e/\sqrt{\mathrm{Hz}}$, independent of the bias modulation.
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