| Автор | Hakonen, P. J. |
| Автор | Kiviranta, M. |
| Автор | Penttilä, J. S. |
| Автор | Paalanen, M. A. |
| Дата выпуска | 2000 |
| dc.description | We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlO<sub> x </sub>/Al devices with 1.2 μm island size and 100 × 100 nm<sup>2</sup> tunnel junctions, the noise at 10 Hz is $6 \times 10^{-4} e/\sqrt{\mathrm{Hz}}$, independent of the bias modulation. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 2000 |
| Название | Noise measurements on single electron transistors using bias switching read-out |
| Тип | research-article |
| DOI | 10.1051/epjap:2000165 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 11 |
| Первая страница | 227 |
| Последняя страница | 229 |
| Аффилиация | Hakonen P. J.; Low Temperature Laboratory, Helsinki University of Technology, PO Box 2200, 02015 Espoo HUT, Finland |
| Аффилиация | Kiviranta M.; VTT Automation, Measurement Technology, PO Box 1304, 02044 VTT, Finland |
| Аффилиация | Penttilä J. S.; Low Temperature Laboratory, Helsinki University of Technology, PO Box 2200, 02015 Espoo HUT, Finland |
| Аффилиация | Paalanen M. A.; Low Temperature Laboratory, Helsinki University of Technology, PO Box 2200, 02015 Espoo HUT, Finland |
| Выпуск | 3 |
