The growth of boron doped (100) textured diamond films by three-step process
Chen, Chau-Shu; Chen, Chi-Ling; Lue, Juh-Tzeng; Chen Chau-Shu; Department of Physics, and Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan; Chen Chi-Ling; Department of Physics, and Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan; Lue Juh-Tzeng; Department of Physics, and Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
Журнал:
The European Physical Journal Applied Physics
Дата:
2000
Аннотация:
p-type (100) faceted diamond films can be successfully grown by bubbling H<sub>2</sub> through liquid B(OCH<sub>3</sub>)<sub>3</sub> during the Microwave Plasma Enhanced Chemical Vapour Deposition (MPCVD). Ramann spectra and scanning electron micrographs (SEM) convincingly illustrate that diamond-film growth on silicon substrates by a three-step process yields good uniformity with preferential orientation. The field emission current density of the boron doped diamond films can be enhanced from 0.7 μA/cm<sup>2</sup> for the as grown films to 140 μA/cm<sup>2</sup> at an applied field of 20 V/μm by hydrogenation treatment.
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