| Автор | Chen, Chau-Shu |
| Автор | Chen, Chi-Ling |
| Автор | Lue, Juh-Tzeng |
| Дата выпуска | 2000 |
| dc.description | p-type (100) faceted diamond films can be successfully grown by bubbling H<sub>2</sub> through liquid B(OCH<sub>3</sub>)<sub>3</sub> during the Microwave Plasma Enhanced Chemical Vapour Deposition (MPCVD). Ramann spectra and scanning electron micrographs (SEM) convincingly illustrate that diamond-film growth on silicon substrates by a three-step process yields good uniformity with preferential orientation. The field emission current density of the boron doped diamond films can be enhanced from 0.7 μA/cm<sup>2</sup> for the as grown films to 140 μA/cm<sup>2</sup> at an applied field of 20 V/μm by hydrogenation treatment. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 2000 |
| Название | The growth of boron doped (100) textured diamond films by three-step process |
| Тип | research-article |
| DOI | 10.1051/epjap:2000139 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 11 |
| Первая страница | 3 |
| Последняя страница | 8 |
| Аффилиация | Chen Chau-Shu; Department of Physics, and Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan |
| Аффилиация | Chen Chi-Ling; Department of Physics, and Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan |
| Аффилиация | Lue Juh-Tzeng; Department of Physics, and Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan |
| Выпуск | 1 |
