In future particle accelerators, silicon detectors will be exposed with large doses of different types of radiation. To understand the corresponding produced damage mechanisms, a systematic study of the influence of the irradiation on the silicon from which the detectors are made has to be carried out. Samples of low n-doped silicon $(n\leq 10^{12}~{\rm cm}^{-3})$ have been irradiated with swift krypton ions $(\langle E\rangle=5.2~{\rm GeV})$, neutrons from a nuclear reactor $(\langle E\rangle \sim 1~{\rm MeV})$ and energetic electrons $(\langle E\rangle=1.5~{\rm MeV})$. Resistivity and Hall effect measurements performed after irradiation show that the silicon is changed to a quasi-intrinsic state, characterized by a very high resistivity. The electrically active defects responsible for that evolution are Maynly acceptor centers, namely divacancy and/or vacancy-doping complexes. Besides, for the highest fluences, only the appearance of a donor center located at about 0.59 eV below the conduction band may explain the observed stabilization of the Fermi level at 0.61 eV. Finally, using a simulation method, the rates of generation of the different defects are estimated.