| Автор | Mangiagalli, P. |
| Автор | Levalois, M. |
| Автор | Marie, P. |
| Автор | Rancoita, P. G. |
| Автор | Rattaggi, M. |
| Дата выпуска | 1999 |
| dc.description | In future particle accelerators, silicon detectors will be exposed with large doses of different types of radiation. To understand the corresponding produced damage mechanisms, a systematic study of the influence of the irradiation on the silicon from which the detectors are made has to be carried out. Samples of low n-doped silicon $(n\leq 10^{12}~{\rm cm}^{-3})$ have been irradiated with swift krypton ions $(\langle E\rangle=5.2~{\rm GeV})$, neutrons from a nuclear reactor $(\langle E\rangle \sim 1~{\rm MeV})$ and energetic electrons $(\langle E\rangle=1.5~{\rm MeV})$. Resistivity and Hall effect measurements performed after irradiation show that the silicon is changed to a quasi-intrinsic state, characterized by a very high resistivity. The electrically active defects responsible for that evolution are Maynly acceptor centers, namely divacancy and/or vacancy-doping complexes. Besides, for the highest fluences, only the appearance of a donor center located at about 0.59 eV below the conduction band may explain the observed stabilization of the Fermi level at 0.61 eV. Finally, using a simulation method, the rates of generation of the different defects are estimated. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | A comparative study of radiation damage on high resistivity silicon |
| Тип | research-article |
| DOI | 10.1051/epjap:1999161 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 6 |
| Первая страница | 121 |
| Последняя страница | 130 |
| Аффилиация | Mangiagalli P.; LERMAT ISMRA (UPRESA 6004), 6 boulevard Maréchal Juin, 14050 Caen, France |
| Аффилиация | Levalois M.; LERMAT ISMRA (UPRESA 6004), 6 boulevard Maréchal Juin, 14050 Caen, France |
| Аффилиация | Marie P.; LERMAT ISMRA (UPRESA 6004), 6 boulevard Maréchal Juin, 14050 Caen, France |
| Аффилиация | Rancoita P. G.; INFN, Sezione di Milano, via Celoria 16, 20100 Milano, Italia |
| Аффилиация | Rattaggi M.; INFN, Sezione di Milano, via Celoria 16, 20100 Milano, Italia |
| Выпуск | 2 |