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Автор Mangiagalli, P.
Автор Levalois, M.
Автор Marie, P.
Автор Rancoita, P. G.
Автор Rattaggi, M.
Дата выпуска 1999
dc.description In future particle accelerators, silicon detectors will be exposed with large doses of different types of radiation. To understand the corresponding produced damage mechanisms, a systematic study of the influence of the irradiation on the silicon from which the detectors are made has to be carried out. Samples of low n-doped silicon $(n\leq 10^{12}~{\rm cm}^{-3})$ have been irradiated with swift krypton ions $(\langle E\rangle=5.2~{\rm GeV})$, neutrons from a nuclear reactor $(\langle E\rangle \sim 1~{\rm MeV})$ and energetic electrons $(\langle E\rangle=1.5~{\rm MeV})$. Resistivity and Hall effect measurements performed after irradiation show that the silicon is changed to a quasi-intrinsic state, characterized by a very high resistivity. The electrically active defects responsible for that evolution are Maynly acceptor centers, namely divacancy and/or vacancy-doping complexes. Besides, for the highest fluences, only the appearance of a donor center located at about 0.59 eV below the conduction band may explain the observed stabilization of the Fermi level at 0.61 eV. Finally, using a simulation method, the rates of generation of the different defects are estimated.
Формат application.pdf
Издатель EDP Sciences
Копирайт © EDP Sciences, 1999
Название A comparative study of radiation damage on high resistivity silicon
Тип research-article
DOI 10.1051/epjap:1999161
Electronic ISSN 1286-0050
Print ISSN 1286-0042
Журнал The European Physical Journal Applied Physics
Том 6
Первая страница 121
Последняя страница 130
Аффилиация Mangiagalli P.; LERMAT ISMRA (UPRESA 6004), 6 boulevard Maréchal Juin, 14050 Caen, France
Аффилиация Levalois M.; LERMAT ISMRA (UPRESA 6004), 6 boulevard Maréchal Juin, 14050 Caen, France
Аффилиация Marie P.; LERMAT ISMRA (UPRESA 6004), 6 boulevard Maréchal Juin, 14050 Caen, France
Аффилиация Rancoita P. G.; INFN, Sezione di Milano, via Celoria 16, 20100 Milano, Italia
Аффилиация Rattaggi M.; INFN, Sezione di Milano, via Celoria 16, 20100 Milano, Italia
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