A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet
Grado-Caffaro, M. A.; Grado-Caffaro, M.; Grado-Caffaro M. A.; C/Julio Palacios, 11, 9B, 28029 Madrid, Spain; Grado-Caffaro M.; C/Julio Palacios, 11, 9B, 28029 Madrid, Spain
Журнал:
The European Physical Journal Applied Physics
Дата:
1999
Аннотация:
A sensitivity factor for electron mobility with respect to the tunnel oxide thickness in a floating gate electron-tunneling MOSFET of n-channel is defined. To this end, a field-dependent mobility is assumed.
192.6Кб