| Автор | Grado-Caffaro, M. A. |
| Автор | Grado-Caffaro, M. |
| Дата выпуска | 1999 |
| dc.description | A sensitivity factor for electron mobility with respect to the tunnel oxide thickness in a floating gate electron-tunneling MOSFET of n-channel is defined. To this end, a field-dependent mobility is assumed. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet |
| Тип | rapid-communication |
| DOI | 10.1051/epjap:1999106 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 5 |
| Первая страница | 1 |
| Последняя страница | 2 |
| Аффилиация | Grado-Caffaro M. A.; C/Julio Palacios, 11, 9B, 28029 Madrid, Spain |
| Аффилиация | Grado-Caffaro M.; C/Julio Palacios, 11, 9B, 28029 Madrid, Spain |
| Выпуск | 1 |
