| Автор | Beji, L. |
| Автор | Rebey, A. |
| Автор | El Jani, B. |
| Дата выпуска | 1998 |
| dc.description | The incorporation of silicon from SiH<sub>4</sub> in GaAs has been studied on a wide range of growth conditions by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE). The highest free carrier concentration exceeds 1 × 10<sup>19</sup> cm<sup>−3</sup>. Compensation ratios appear to be strongly dependent on the SiH<sub>4</sub> partial pressure. The relatively high compensation ratios essentially originate from the amphoteric behaviour of silicon. The temperature dependence of silicon doping has been investigated in the range 650 °C to 765 °C with various silane partial pressures. The activation energy of Si incorporation varies from 0 to 2.2 eV. The dependence of the free electron concentration on the arsine partial pressure (P <sub>AsH<sub>3</sub> </sub>) leads to the empirical relationship: n = aP <sub>AsH<sub>3</sub> </sub> + $bP_{AsH_3}^{-\frac{4}{3}$, which describes the relationship between silicon doping concentration and arsine partial pressure. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1998 |
| Название | Incorporation modes of silicon in GaAs: Si grown by metalorganic vapor phase epitaxy |
| Тип | research-article |
| DOI | 10.1051/epjap:1998270 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 4 |
| Первая страница | 269 |
| Последняя страница | 273 |
| Аффилиация | Beji L.; Laboratoire de Physique des Matériaux, Faculté des Sciences, TN-5000 Monastir, Tunisia |
| Аффилиация | Rebey A.; Laboratoire de Physique des Matériaux, Faculté des Sciences, TN-5000 Monastir, Tunisia |
| Аффилиация | El Jani B.; Laboratoire de Physique des Matériaux, Faculté des Sciences, TN-5000 Monastir, Tunisia |
| Выпуск | 3 |
