Studies on Al–Mg solid solutions using electrical resistivity and microhardness measurements
Gaber, A.; Afify, N.; El-Halawany, S. M.; Mossad, A.; Gaber A.; Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt; Afify N.; Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt; El-Halawany S. M.; Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt; Mossad A.; Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt
Журнал:
The European Physical Journal Applied Physics
Дата:
1999
Аннотация:
Al-C at% Mg alloys (C = 0.82, 1.84, 3.76, 5.74 and 12.18) have been selected for this study. From the electrical resistivity measurements it is concluded that the resistivity increment of Al–Mg alloys (in a solid solution state) is proportional to the atomic fractional constituents (Mg and Al) as $\Delta\rho_{\rm all}=64.66\ c(1-c)~\mu\Omegarm$ cm. In addition, both the temperature coefficient of resistivity, α <sub>all</sub> and the relaxation time of the free electrons τ <sub>all</sub> in the alloys diminish with increasing the solute Mg concentration. The increase of the scattering power, η, with increasing C is interpreted to be due to the contribution of electron-impurity scattering. The percentage increase due to electron-impurity scattering per one atomic percent Mg has been determined as 12.99%. The Debye temperature θ decreases as the Mg concentration increases. The microhardness results showed that the solid solution hardening obeys the relation ΔHV <sub>s</sub> = 135.5C <sup>0.778</sup> MPa which is comparable to the theory of solid solution hardening for all alloys; ΔHV <sub>s</sub> ≈ C <sup>0.5−0.67</sup> MPa.
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