| Автор | Gaber, A. |
| Автор | Afify, N. |
| Автор | El-Halawany, S. M. |
| Автор | Mossad, A. |
| Дата выпуска | 1999 |
| dc.description | Al-C at% Mg alloys (C = 0.82, 1.84, 3.76, 5.74 and 12.18) have been selected for this study. From the electrical resistivity measurements it is concluded that the resistivity increment of Al–Mg alloys (in a solid solution state) is proportional to the atomic fractional constituents (Mg and Al) as $\Delta\rho_{\rm all}=64.66\ c(1-c)~\mu\Omegarm$ cm. In addition, both the temperature coefficient of resistivity, α <sub>all</sub> and the relaxation time of the free electrons τ <sub>all</sub> in the alloys diminish with increasing the solute Mg concentration. The increase of the scattering power, η, with increasing C is interpreted to be due to the contribution of electron-impurity scattering. The percentage increase due to electron-impurity scattering per one atomic percent Mg has been determined as 12.99%. The Debye temperature θ decreases as the Mg concentration increases. The microhardness results showed that the solid solution hardening obeys the relation ΔHV <sub>s</sub> = 135.5C <sup>0.778</sup> MPa which is comparable to the theory of solid solution hardening for all alloys; ΔHV <sub>s</sub> ≈ C <sup>0.5−0.67</sup> MPa. |
| Формат | application.pdf |
| Издатель | EDP Sciences |
| Копирайт | © EDP Sciences, 1999 |
| Название | Studies on Al–Mg solid solutions using electrical resistivity and microhardness measurements |
| Тип | research-article |
| DOI | 10.1051/epjap:1999204 |
| Electronic ISSN | 1286-0050 |
| Print ISSN | 1286-0042 |
| Журнал | The European Physical Journal Applied Physics |
| Том | 7 |
| Первая страница | 103 |
| Последняя страница | 109 |
| Аффилиация | Gaber A.; Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt |
| Аффилиация | Afify N.; Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt |
| Аффилиация | El-Halawany S. M.; Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt |
| Аффилиация | Mossad A.; Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt |
| Выпуск | 2 |
