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The Institute of Physics ( IOP ) по журналам "Semiconductor Science and Technology"

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  • 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
    S S Mikhrin; A E Zhukov; A R Kovsh; N A Maleev; V M Ustinov; Yu M Shernyakov; I P Soshnikov; D A Livshits; I S Tarasov; D A Bedarev; B V Volovik; M V Maximov; A F Tsatsul'nikov; N N Ledentsov; P S Kop'ev; D Bimberg; Zh I Alferov (Institute of Physics Publishing, 2000-11-01)
  • 1.3 µm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
    Feng, W; Pan, J Q; Wang, L; Liao, Z Y; Cheng, Y B; Chen, D B; Zhao, L J; Zhu, H L; Wang, W; Feng, W; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China; Pan, J Q; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China; Wang, L; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China; Liao, Z Y; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China; Cheng, Y B; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China; Chen, D B; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China; Zhao, L J; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China; Zhu, H L; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China; Wang, W; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China (Institute of Physics Publishing, 2007-08-01)
  • 1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
    N N Ledentsov; M V Maximov; D Bimberg; T. Maka; C M Sotomayor Torres; I V Kochnev; I L Krestnikov; V M Lantratov; N A Cherkashin; Yu M Musikhin; Zh I Alferov (Institute of Physics Publishing, 2000-06-01)
  • 1.3 µm range 40 GHz quantum-dot mode-locked laser under external continuous wave light injection or optical feedback
    Fiol, G; Kleinert, M; Arsenijević, D; Bimberg, D; Fiol, G; Institut für Festkörperphysik, Technische Universität Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany; Kleinert, M; Institut für Festkörperphysik, Technische Universität Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany; Arsenijević, D; Institut für Festkörperphysik, Technische Universität Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany; Bimberg, D; Institut für Festkörperphysik, Technische Universität Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany (Institute of Physics Publishing, 2011-01-01)
  • 1.3 µm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
    I L Krestnikov; N A Maleev; A V Sakharov; A R Kovsh; A E Zhukov; A F Tsatsul'nikov; V M Ustinov; Zh I Alferov; N N Ledentsov; D Bimberg; J A Lott (Institute of Physics Publishing, 2001-10-01)
  • 1.3–1.5 µm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures
    N V Baidus; B N Zvonkov; P B Mokeeva; E A Uskova; S V Tikhov; M I Vasilevskiy; M J M Gomes; S A Filonovich (Institute of Physics Publishing, 2004-04-01)
  • 1.55 µm spot-size converter integrated polarization-insensitive quantum-well semiconductor optical amplifier with tensile-strained barriers
    Hong Ma; Sihai Chen; Xinjian Yi; Guangxi Zhu (Institute of Physics Publishing, 2004-07-01)
  • 1.55 µm spot-size converter with monolithically integrated laser diode by conventional process
    Hou, Lianping; Wang, Wei; Zhu, Hongliang; Hou, Lianping; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China; Wang, Wei; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China; Zhu, Hongliang; National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China (Institute of Physics Publishing, 2005-02-01)
  • 1/f noise and dye-sensitized solar cells
    Jayaweera, P V V; Pitigala, P K D D P; Perera, A G U; Tennakone, K; Jayaweera, P V V; Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA; Institute of Fundamental Studies, Hantana Rd, Kandy, Sri Lanka; Pitigala, P K D D P; Institute of Fundamental Studies, Hantana Rd, Kandy, Sri Lanka; Perera, A G U; Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA; Institute of Fundamental Studies, Hantana Rd, Kandy, Sri Lanka; Tennakone, K; Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA; Institute of Fundamental Studies, Hantana Rd, Kandy, Sri Lanka (Institute of Physics Publishing, 2005-08-01)
  • 1/f noise in Langmuir–Blodgett films on silicon
    Malik, S; Ray, A K; Bruce, S; Malik, S; Department of Physics, Faculty of Science and Technology, Universiti Pendidikan Sultan Idris, 35900 Tanjong Malim, Malaysia; Ray, A K; Nanotechnology Research Laboratory, Department of Materials, Queen Mary College, University of London, Mile End Road, London E1 4NS, UK; Bruce, S; Ymergatan 26C, SE-75325, Uppsala, Sweden (Institute of Physics Publishing, 2005-05-01)
  • 1/f noise in Ohmic MOS inversion layers
    S A Hayat; B K Jones; P C Russell; S A Hayat; Dept. of Phys., Lancaster Univ., UK; B K Jones; Dept. of Phys., Lancaster Univ., UK; P C Russell; Dept. of Phys., Lancaster Univ., UK (Institute of Physics Publishing, 1988-09-01)
  • 1/f noise in VMOS power transistors
    B K Jones; P C Russell; B K Jones; Dept. of Phys., Lancaster Univ., UK; P C Russell; Dept. of Phys., Lancaster Univ., UK (Institute of Physics Publishing, 1989-02-01)
  • 10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation
    Fang-I Lai; Tao-Hung Hsueh; Ya-Hsien Chang; Hao-Chung Kuo; S C Wang; Li-Hong Laih; C P Song; H P Yang (Institute of Physics Publishing, 2004-08-01)
  • 10 Gbit s<sup>−1</sup> electroabsorption modulator integrated with a DBR laser using the selective area growth technique
    Sim, Jae-Sik; Kim, Sung-Bock; Ryu, Sang-Wan; Baek, Yong-Soon; Sim, Jae-Sik; Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-350, Korea; Kim, Sung-Bock; Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-350, Korea; Ryu, Sang-Wan; Department of Physics, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500-757, Korea; Baek, Yong-Soon; Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon 305-350, Korea (Institute of Physics Publishing, 2005-10-01)
  • 10 Gbit s<sup>−1</sup> electroabsorption-modulated laser light-source module using selective area MOVPE
    Li, Baoxia; Zhu, Hongliang; Zhang, Jing; Zhao, Qian; Pian, Jiaoqing; Ding, Ying; Wang, Baojun; Bian, Jing; Zhao, Lingjuan; Wang, Wei; Li, Baoxia; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Zhu, Hongliang; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Zhang, Jing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Zhao, Qian; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Pian, Jiaoqing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Ding, Ying; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Wang, Baojun; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Bian, Jing; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Zhao, Lingjuan; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Wang, Wei; National Research Center for Optoelectronics Technology, Institute of Semiconductors, the Chinese Academy of Sciences, Beijing 100083, People's Republic of China (Institute of Physics Publishing, 2005-09-01)
  • 10 Gbps transmission of electroabsorption modulators integrated with a 4-channel distributed Bragg reflector laser array
    Ryu, Sang-Wan; Sim, Jae-Sik; Kwan, Yong-Hwan; Kim, Sung-Bock; Baek, Yong-Soon; Ryu, Sang-Wan; Department of Physics, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500-757, Korea; Sim, Jae-Sik; Electronics and Telecommunication Research Institute, 161 Gajong-Dong, Yusong-Gu, Taejon 305-350, Korea; Kwan, Yong-Hwan; Electronics and Telecommunication Research Institute, 161 Gajong-Dong, Yusong-Gu, Taejon 305-350, Korea; Kim, Sung-Bock; Electronics and Telecommunication Research Institute, 161 Gajong-Dong, Yusong-Gu, Taejon 305-350, Korea; Baek, Yong-Soon; Electronics and Telecommunication Research Institute, 161 Gajong-Dong, Yusong-Gu, Taejon 305-350, Korea (Institute of Physics Publishing, 2008-05-01)
  • 1024 × 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications
    Gunapala, S D; Bandara, S V; Liu, J K; Hill, C J; Rafol, S B; Mumolo, J M; Trinh, J T; Tidrow, M Z; LeVan, P D; Gunapala, S D; Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA; Bandara, S V; Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA; Liu, J K; Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA; Hill, C J; Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA; Rafol, S B; Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA; Mumolo, J M; Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA; Trinh, J T; Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA; Tidrow, M Z; Missile Defense Agency/AS, 7100 Defense Pentagon, Washington, DC 20301, USA; LeVan, P D; Air Force Research Laboratory, Kirtland Air Force Base, NM 87117, USA (Institute of Physics Publishing, 2005-05-01)
  • 20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power
    Sumpf, Bernd; Fricke, Jörg; Ressel, Peter; Zorn, Martin; Erbert, Götz; Tränkle, Günther; Sumpf, Bernd;; Zorn, Martin;; Fricke, Jörg; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany; Ressel, Peter; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany; Erbert, Götz; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany; Tränkle, Günther; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany (Institute of Physics Publishing, 2011-10-12)
  • 2D channel transport of metal-insulator semiconductor field effect transistors on narrow-gap Hg<sub>1-x</sub>Cd<sub>x</sub>Te (0.2<x<or=0.3)
    A Jaeger; W Hoerstel; M Thiede; P Schafer; J Elsing; A Jaeger; Fac. Phys., Humboldt-Univ., Berlin, Germany; W Hoerstel; Fac. Phys., Humboldt-Univ., Berlin, Germany; M Thiede; Fac. Phys., Humboldt-Univ., Berlin, Germany; P Schafer; Fac. Phys., Humboldt-Univ., Berlin, Germany; J Elsing; Fac. Phys., Humboldt-Univ., Berlin, Germany (Institute of Physics Publishing, 1994-01-01)
  • 2D ensemble Monte Carlo modelling of bulk and FD SOI MOSFETs: active layer thickness and noise performance
    R Rengel; D Pardo; M J Martín-Martínez; R Rengel; Departamento de Física Aplicada, Universidad de Salamanca. Pza de la Merced s/n, 37008 Salamanca, Spain; D Pardo; Departamento de Física Aplicada, Universidad de Salamanca. Pza de la Merced s/n, 37008 Salamanca, Spain; M J Martín-Martínez; Departamento de Física Aplicada, Universidad de Salamanca. Pza de la Merced s/n, 37008 Salamanca, Spain (Institute of Physics Publishing, 2004-04-01)